Dr. Hang Chi’s research focuses on (i) magnetically proximitized topological interfaces for building next-generation magnetic memory/logic devices with superior performance and efficiency, as well as (ii) magnetic superconducting heterostructures for non-reciprocal quantum transport and quantum information & computation. The group combines ab initio simulations; crystal growth, thin film and heterostructure deposition and micro/nanodevice fabrication; structural, magnetic, transport, advanced neutron, muon, scanning tunneling characterizations of extraordinary surface and interfaces.
Selected publications
- H. Chi, Y. Ou, T. B. Eldred, et al., "Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride", Nature Communications 14, 3222 (2023).
- H. Chi and J. S. Moodera, "Progress and prospects in the quantum anomalous Hall effect", APL Materials 10, 090903 (2022).
- H. Chi, C. Zhang, G. Gu, et al., "Lifshitz transition mediated electronic transport anomaly in bulk ZrTe5", New Journal of Physics 19, 015005 (2017).
- H. Chi, W. Liu, and C. Uher, "Chapter 3 Growth and Transport Properties of Tetradymite Thin Films" Materials Aspect of Thermoelectricity, p95-124 (CRC Press, 2016)
- H. Chi, H. Kim, J. C. Thomas, et al., "Low-temperature structural and transport anomalies in Cu2Se", Physical Review B 89, 195209 (2014).